Related Experiment Video
Updated: Jan 20, 2026
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Ultraviolet Photoconductive Detector Based on MgO/a-GaN Heterostructure Grown by Aqueous Method
Wensi Zhang1, Naisen Yu1, Haiou Li2
1Liaoning Key Laboratory of Optoelectronic Films and Materials, School of Physics and Materials Engineering, Dalian Minzu University, Dalian 116600, PR China.
Abstract:
Thin MgO nanostructure layer was grown on a-plane GaN film in this study using low temperature aqueous method. The thin MgO layer showed uniform sheet-like morphology. Meanwhile, ultraviolet (UV) photoconductive detector based on MgO/a-GaN heterostructure was fabricated by simple way. The obtained detector displayed excellent UV sensing properties. Results showed that the thin MgO nanostructure layer can effectively decrease the dark current and passivate the surface defects. The facile method will provide a new route to adopt nanostructures for applications in enhancing the performance of GaN-based UV detector.
Related Concept Videos
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
07:38Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
03:03Chemical Reactions in Aqueous Solutions
02:11Leveling Effect and Non-Aqueous Acid-Base Solutions
The Leveling Effect of a Solvent
A generic acid (HA) reacts with the generic base (B-) to yield the corresponding conjugate base (A-) and conjugate acid (HB):
04:57Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
02:42Aqueous Solutions and Heats of Hydration
When ionic compounds dissolve in water, the ions in the solid separate and disperse uniformly throughout the solution because water molecules surround and solvate the ions, reducing the strong electrostatic forces between them. This process...