Related Experiment Video
Updated: Jan 20, 2026
A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires
Published on: January 21, 2016
Fabrication and Electrical Properties of Silver Telluride Nanowires
Yuan Gao1, Ka Wang1, Haizeng Song2
1School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China.
Abstract:
As a new topological insulator material, the β-phase silver telluride (Ag₂Te) nanowire is a narrow bandgap semiconductor, which is attractive for its excellent properties. In this study, Ag₂Te nanowires were synthesized by one-step hydrothermalmethod. The nanowires showed good electrical properties with maximum drain-source voltage of 1.5 V, and the output current was up to 20 μA. The gate voltage has a significant effect on output current for the device. The Ag₂Te nanowires will have more extensive and in-depth applications in the fields of optoelectronics and thermoelectricity.
Related Concept Videos
07:50A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires
09:01Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se2 Thin-film Solar Cells
09:00Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
07:14Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization
09:14Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
07:23Fabrication of Thin Film Silver/Silver Chloride Electrodes with Finely Controlled Single Layer Silver Chloride