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Related Experiment Video

Updated: Jan 19, 2026

Terahertz Imaging and Characterization Protocol for Freshly Excised Breast Cancer Tumors
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Hyperspectral time-domain terahertz nano-imaging.

Neda Alsadat Aghamiri, Florian Huth, Andreas J Huber

    Optics Express
    |September 13, 2019
    PubMed
    Summary

    We developed hyperspectral terahertz (THz) nano-imaging, combining scattering-type scanning near-field optical microscopy (s-SNOM) with THz time-domain spectroscopy (TDS). This technique noninvasively measures carrier concentration in nanoscale semiconductor materials.

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    Area of Science:

    • Optics and Photonics
    • Materials Science
    • Condensed Matter Physics

    Background:

    • Terahertz (THz) near-field microscopy offers significant potential for characterizing nanoscale materials and photonic devices.
    • Existing techniques may have limitations in resolution or non-invasive measurement capabilities.

    Purpose of the Study:

    • To introduce and demonstrate hyperspectral THz nano-imaging by integrating s-SNOM with THz-TDS.
    • To showcase the technique's ability to perform nanoscale carrier profiling.
    • To enable non-invasive characterization of semiconductor materials.

    Main Methods:

    • Combining scattering-type scanning near-field optical microscopy (s-SNOM) with THz time-domain spectroscopy (TDS).
    • Acquiring hyperspectral images with high spatial resolution (~170 nm).
    • Measuring time-domain spectra from 0.4 to 1.8 THz at each pixel.
    • Applying Drude model fitting to spectral data.

    Main Results:

    • Successfully generated a 40x20 pixel hyperspectral image in 180 minutes.
    • Achieved a spatial resolution of approximately 170 nm.
    • Non-invasively measured local mobile carrier concentration in differently doped Si areas.
    • Demonstrated the technique's effectiveness on a heterogeneously doped Si semiconductor sample.

    Conclusions:

    • Hyperspectral THz nano-imaging is a powerful tool for nanoscale characterization.
    • The technique enables non-invasive, high-resolution measurement of carrier concentration.
    • Potential applications include semiconductor industrial structures, complex electron matter, and low-dimensional materials.