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Updated: Jan 19, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Polymer Encapsulants for Threshold Voltage Control in Carbon Nanotube Transistors
François Lapointe1, Ashish Sapkota1,2, Jianfu Ding1
1National Research Council Canada , 1200 Montreal Road , Ottawa K1A 0R6 , Ontario , Canada.
Abstract:
Although carbon nanotube transistors present outstanding performances based on key metrics, large-scale uniformity and repeatability required in printable electronics depend greatly on proper control of the electrostatic environment. Through a survey of polymer dielectric encapsulants compatible with printing processes, a simple correlation is found between the measured interfacial charge density and the onset of conduction in a transistor, providing a rational route to control the electrical characteristics of carbon nanotube transistors. Smooth and continuous balancing of the properties between unipolar p-type and n-type transport is achieved using a molar fraction series of poly(styrene-co-2-vinylpyridine) statistical copolymers combined with an electron-donating molecule. We further demonstrate the easy fabrication of a p-n diode which shows a modest rectification of 8:1.
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