Group delay time and Hartman effect in strained Weyl semimetals

Area of Science:

• Condensed Matter Physics
• Quantum Materials Science

Background:

• Weyl semimetals (WSMs) exhibit unique electronic properties due to their topological nature.
• Quantum tunneling phenomena, such as the Hartman effect, are of significant interest in condensed matter physics.

Purpose of the Study:

• To theoretically investigate the group delay time in Weyl semimetals under strain.
• To explore the influence of strain on the Hartman effect in WSMs.
• To understand how different types of strain modulate quantum transport properties.

Main Methods:

• Theoretical analysis of group delay time in strained WSMs.
• Investigation of the Hartman effect under critical incident angles and strain conditions.
• Examination of the dependence of the Hartman effect on unidirectional and shear strain tensors.

Main Results:

• The Hartman effect is observable in WSMs when incident angles and specific strain components exceed critical values.
• Group delay time and the Hartman effect are significantly influenced by the strength of unidirectional strain and the ratio of shear strain.
• Tensile and compressive strains exhibit distinct effects on group delay time and transmission probability.

Conclusions:

• Strain engineering provides a powerful tool to modulate quantum tunneling phenomena in Weyl semimetals.
• The findings offer insights into controlling group delay time and the Hartman effect through strain in topological materials.
• This study highlights the potential for designing novel quantum devices based on strained WSMs.