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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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Multimode Signal Processor Unit Based on the Ambipolar WSe2-Cr Schottky Junction.

Yan Chen1,2, Chong Yin1,3, Xudong Wang1

  • 1State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China.

ACS Applied Materials & Interfaces
|September 27, 2019
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel WSe2-Cr Schottky junction device with asymmetric contacts. This tunable junction exhibits multiple rectifying states and functions as a multimode signal processor for optoelectronic circuits.

Keywords:
2D materialsSchottky junctionWSe2rectifiersignal processor

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Schottky barriers in 2D materials present challenges and opportunities for electronic devices.
  • Asymmetric device architecture can enable novel functionalities.

Purpose of the Study:

  • To design and investigate a novel WSe2-Cr Schottky junction device.
  • To explore its potential as a tunable multimode signal processor.

Main Methods:

  • Fabrication of a WSe2-Cr Schottky junction with asymmetric source/drain contact areas.
  • Electrical characterization under varying gate voltages.
  • Investigation of device response to electrical fields and light illumination.

Main Results:

  • Achieved a high rectification ratio exceeding 10^5.
  • Demonstrated multiple tunable rectifying states (full pass, forward pass, off, backward pass).
  • Showcased effective modulation of switching, rectification, and sine wave amplitude via electrical/optical stimuli.

Conclusions:

  • The WSe2-Cr Schottky junction with asymmetric contacts offers tunable multi-state rectification.
  • This device acts as a versatile multimode signal processor with significant potential for optoelectronic-integrated chips.