Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors

Area of Science:

• Organic electronics
• Materials science
• Semiconductor physics

Background:

• Organic memory transistors (OMTs) are crucial for next-generation electronic devices.
• Graphene oxide (GO) and TIPS-pentacene are promising materials for OMTs.
• Controlling charge trapping in OMTs is key to memory performance.

Purpose of the Study:

• To investigate the memory behavior of OMTs using GO as a floating gate.
• To analyze the impact of programming voltage on hysteresis and threshold voltage shifts.
• To evaluate the charge retention and non-volatile characteristics of the fabricated devices.

Main Methods:

• Fabrication of OMTs with GO floating gate and cPMMA insulating layer.
• Characterization of transistor behavior, including transfer and output characteristics.
• Analysis of hysteresis, threshold voltage shifts, and charge retention under varying voltage pulses.

Main Results:

• OMTs with GO exhibited significant hysteresis, increasing with programming voltage.
• Threshold voltage shifts were observed due to charge trapping/detrapping at the floating gate.
• Counter-clockwise hysteresis indicated charge transport at the semiconductor/insulator interface.
• The devices demonstrated non-volatile memory with a large memory window (~30 V) and high charge density (9.15 × 10^11 cm^-2).

Conclusions:

• GO is an effective floating gate material for OMTs.
• The OMTs show promising non-volatile memory characteristics.
• The study provides insights into charge transport mechanisms in GO-based OMTs.