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Updated: Jan 6, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN

Yitian Bao1, Shijie Xu1

  • 1Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China.

ACS Omega
|October 2, 2019
PubMed

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