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Electrostatically Doped Silicon Nanowire Arrays for Multispectral Photodetectors
ACS Nano
|October 3, 2019
Summary
Researchers developed novel indium oxide/silicon nanowire photodetectors. These devices achieve higher quantum efficiencies and tunable spectral responses, offering a promising path for efficient, wavelength-selective photodetection.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Nanowire photodetectors offer tunable optical absorption.
- Traditional doping methods hinder shallow junction fabrication, limiting quantum efficiency.
Purpose of the Study:
- To develop highly efficient nanowire photodetectors using a novel heterojunction approach.
- To demonstrate tunable spectral responses for multispectral detection.
Main Methods:
- Fabrication of radial heterojunction photodiodes via conformal coating of indium oxide on silicon nanowire arrays.
- Utilizing the high work function of indium oxide to create a virtual p-n junction.
Main Results:
- Achieved efficient carrier separation and collection.
- Improved quantum efficiency up to 0.2.
- Demonstrated tunable spectral responses across visible wavelengths by controlling nanowire radii.
Conclusions:
- The indium oxide/silicon nanowire heterojunction is a viable alternative for high-performance photodetectors.
- This approach enables the development of efficient, wavelength-selective, and multispectral photodetectors.
