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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Electronic band structure in n-type GaAs/AlGaAs wide quantum wells in tilted magnetic field

I L Drichko1, I Yu Smirnov1, A V Suslov2

  • 1Ioffe Institute, 194021 St. Petersburg, Russia.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|October 3, 2019
PubMed

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