Influence of defects on dissipative transport in graphene nanoribbons tunnel field-effect transistor

The influence of point defects on the dissipative carrier transport of armchair graphene nanoribbon (GNR) tunnel field effect transistor (TFET) is studied by solving the self-consistent Born approximation problem using the extended lowest order expansion method. The simulation results show that by introducing point defects to the channel region of the armchair GNR-TFET, the OFF state phonon contribution to the carrier transport changes significantly compared with that of the pristine device. The presence of defect would introduce additional optical phonon mode of much higher energy, which facilitates the OFF state phonon-assisted band-to-band tunneling process in a broader energy range and contribute to the dissipative carrier transport. In the ON-state, where the direct source to drain tunneling is at maximum, the electron-phonon interaction has a negligible effect, which is similar to that of the pristine device. Moreover, different defect types and locations are examined, their influence on hole and electron transport are reported.