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Twist Angle mapping in layered WS2 by Polarization-Resolved Second Harmonic Generation.

Sotiris Psilodimitrakopoulos1, Leonidas Mouchliadis1, Ioannis Paradisanos1,2

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We developed a polarization-resolved second harmonic generation (P-SHG) microscopy technique to map twist angles in stacked transition metal dichalcogenides (TMDs). This method accurately characterizes large areas of 2D materials, crucial for understanding their novel properties.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Stacked atomically thin transition metal dichalcogenides (TMDs) display unique physical properties influenced by the twist angle between layers.
  • Accurate characterization of twist angles in large-area 2D material structures is essential for exploring their potential.

Purpose of the Study:

  • To develop and demonstrate a high-resolution, large-area mapping technique for twist angles in stacked TMDs.
  • To establish a robust method for characterizing the twist-angle-dependent properties of 2D heterostructures.

Main Methods:

  • Utilizing polarization-resolved second harmonic generation (P-SHG) imaging microscopy.
  • Combining intensity and polarization measurements of SHG in overlapping WS2 stacked layers.
  • Performing pixel-by-pixel mapping of the twist angle across large sample areas.

Main Results:

  • Successfully mapped the twist angle in large areas of overlapping WS2 stacked layers with high resolution.
  • Demonstrated the robustness of the P-SHG method through combined intensity and polarization analysis.
  • Achieved accurate measurement and mapping of twist angles, enabling detailed characterization.
  • Showcased the ability of P-SHG to image individual layers at a specific 30° twist angle.

Conclusions:

  • P-SHG imaging microscopy provides a powerful tool for characterizing twist angles in stacked 2D materials.
  • This technique is vital for the fundamental understanding and technological application of TMD heterostructures.
  • The developed methodology offers a pathway for precise control and analysis of twist-angle-engineered electronic and optical properties.