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Magneto-Memristive Switching in a 2D Layer Antiferromagnet
Hyun Ho Kim1, Shengwei Jiang2, Bowen Yang1
1Institute for Quantum Computing, Department of Chemistry, and Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada.
Advanced Materials (Deerfield Beach, Fla.)
|October 25, 2019
Summary
Researchers observed memristive switching in chromium triiodide (CrI3) nanoscale junctions. This spin-coupled behavior allows magnetic field tuning of resistance and electric-field control of magnetization, advancing neuromorphic computing and memory applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Memristive devices offer potential for neuromorphic computing and phase-change memory due to their tunable resistance.
- Coupling resistive states with charge or spin order enables electrical control over collective material phases.
Purpose of the Study:
- To investigate memristive switching in nanoscale junctions of ultrathin chromium triiodide (CrI3).
- To explore the coupling between spin order and electrical properties in CrI3 for advanced electronic applications.
Main Methods:
- Fabrication of nanoscale junctions using ultrathin CrI3 layers.
- Measurement of tunneling current and resistance switching behavior.
- Application of magnetic fields and electric fields to probe device characteristics.
Main Results:
- Observed abrupt, memristive switching of tunneling current in CrI3 junctions.
- Demonstrated tuning of resistance hysteresis by magnetic field, linked to spin order.
- Achieved electric-field switching of magnetization in multilayer CrI3 samples.
Conclusions:
- Ultrathin CrI3 exhibits robust memristive switching behavior.
- The coupling between spin order and electrical resistance is a key feature for device control.
- These findings pave the way for novel spintronic devices and memory technologies.
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