Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

1.3K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.3K
Types of Semiconductors01:20

Types of Semiconductors

1.3K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.3K
Schottky Barrier Diode01:27

Schottky Barrier Diode

888
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
888
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

727
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
727
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

850
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
850
MOSFET01:16

MOSFET

1.1K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Wafer-scale growth of highly stable p-type semiconducting monolayer MoSi<sub>2</sub>N<sub>4</sub> single crystals.

Nature materials·2026
Same author

Direct Thermal Resistance Measurement of a Single Defect in Graphite.

ACS nano·2026
Same author

Scalable Topochemical Synthesis of Black Phosphorene Nanoribbons.

Journal of the American Chemical Society·2026
Same author

A high-frequency silicon-graphene-germanium barristor.

Nature communications·2026
Same author

Large-Scale Integration of Experimental and Computational Data for 2D Materials.

ACS nano·2026
Same author

Point defects in monolayer WSi<sub>2</sub>N<sub>4</sub> and MoSi<sub>2</sub>N<sub>4</sub>.

Nature communications·2026

Related Experiment Video

Updated: Jan 5, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.6K

A vertical silicon-graphene-germanium transistor.

Chi Liu1, Wei Ma1,2, Maolin Chen1,2

  • 1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.

Nature Communications
|October 27, 2019
PubMed
Summary

Researchers developed a new silicon-graphene-germanium transistor with a Schottky emitter. This design significantly boosts transistor operating frequency for advanced high-frequency applications.

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.9K
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

614

Related Experiment Videos

Last Updated: Jan 5, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.6K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.9K
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

614

Area of Science:

  • Semiconductor device physics
  • Materials science
  • Nanoelectronics

Background:

  • Graphene-base transistors offer high-frequency potential due to graphene's atomic thickness.
  • Conventional tunnel emitters in these transistors have high potential barriers, limiting performance.
  • Theoretical models proposed graphene-base heterojunction transistors with silicon layers to overcome limitations.

Purpose of the Study:

  • To demonstrate a vertical silicon-graphene-germanium transistor with an improved Schottky emitter.
  • To investigate the performance enhancement of graphene-base transistors using a novel emitter design.

Main Methods:

  • Fabrication of a vertical silicon-graphene-germanium transistor.
  • Characterization of a Schottky emitter composed of single-crystal silicon and single-layer graphene.
  • Analysis of current and capacitance properties of the Schottky emitter.

Main Results:

  • Achieved a Schottky emitter with a current density of 692 A cm⁻² and capacitance of 41 nF cm⁻².
  • Projected increase in alpha cut-off frequency from ~1 MHz to over 1 GHz.
  • Demonstrated the potential of semiconductor-graphene-semiconductor structures for ultra-high frequency operation.

Conclusions:

  • The developed Schottky emitter significantly enhances graphene-base transistor performance.
  • Vertical silicon-graphene-germanium transistors show promise for terahertz applications.
  • Further engineering of semiconductor-graphene-semiconductor devices could lead to next-generation ultra-high frequency electronics.