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Updated: Jan 4, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Functionalized single-walled carbon-nanotube-blended P3HT-based high performance memory behavior thin-film transistor
B Aïssa1,2, A Ali2, A Bentouaf3
1MPB Communications Inc., Space & Photonics Division, 151 Hymus Boulv., Pointe Claire, H9R 1E9, Canada.
None:
We report on the fabrication and transport properties of single-walled carbon nanotubes (SWCNT) blended with P3HT (poly 3-hexyl thiophene-2, 5-diyl). The composite is used as a hybrid organic active channel transistor. The performances of the fabricated devices were investigated as a function of the SWCNTs' loads in the composite, and their response evaluated under white light illumination. Our results show that for SWCNT loads ≤1.5 wt%, all the devices behave as p-type transistors, exhibiting excellent performance, with an I on /I off ratio of 104 and a maximum on-state current (I on) exceeding 80 μA. Moreover, compared with pristine transistors with a P3HT channel, the Hall mobility of these hybrid TFTs was found to increase by more than one order of magnitude, i.e. increasing from 0.062 to 1.54 cm2 V-1 s-1. Finally, under light illumination, the transfer characteristics (i.e. I DS as a function of V GS) were found to systematically undergo a typical shift together with a fully-reversible memory behavior. A fundamental understanding of this work can assist in providing new routes for the development of reliable efficient hybrid organic-based optoelectronic devices.
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