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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride
Xibiao Ren1, Xiaowei Wang1, Chuanhong Jin1
1State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , Hangzhou , Zhejiang 310027 , China.
Abstract:
Precise control and in-depth understanding of the interfaces are crucial for the functionality-oriented material design with desired properties. Herein, via modifying the long-standing bicrystal strategy, we proposed a novel nanowelding approach to build up interfaces between two-dimensional (2D) materials with atomic precision. This method enabled us, for the first time, to experimentally achieve the quasi-full-parameter-space grain boundaries (GBs) in 2D hexagonal boron nitride (h-BN). It further helps us unravel the long-term controversy and confusion on the registry of GBs in h-BN, including (i) discriminate the relative contribution of the strain and chemical energy on the registry of GBs; (ii) identify a new dislocation core-Frank partial dislocation and four new antiphase boundaries; and (iii) confirm the universal GB faceting. Our work provides a new paradigm to the exploitation of structural-property correlation of interfaces in 2D materials.
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