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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Flash Infrared Annealing for Perovskite Solar Cell Processing
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Defect-Engineering-Enabled High-Efficiency All-Inorganic Perovskite Solar Cells.

Jia Liang1,2, Xiao Han1,3, Ji-Hui Yang4

  • 1Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.

Advanced Materials (Deerfield Beach, Fla.)
|November 5, 2019
PubMed
Summary

Defect engineering of cesium lead iodide (CsPbI3) perovskite solar cells (PSCs) with bromine and indium iodide resulted in improved efficiency and stability. This breakthrough enables CsPbI3:Br:InI3 PSCs to perform well in ambient conditions without gloveboxes.

Keywords:
CsPbX3all-inorganic solar cellsdefect engineeringindiumperovskite solar cells

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Area of Science:

  • Materials Science
  • Photovoltaics
  • Renewable Energy

Background:

  • Cesium lead iodide (CsPbI3) perovskite solar cells (PSCs) show promise but suffer from low power conversion efficiencies (PCEs) due to defects.
  • Existing PSCs often rely on expensive and unstable components, limiting their practical application.

Purpose of the Study:

  • To develop a novel all-inorganic perovskite material for PSCs with enhanced efficiency and stability.
  • To address the defect-related limitations of CsPbI3 in photovoltaic applications.

Main Methods:

  • Defect engineering of CsPbI3 by incorporating bromine and indium iodide (CsPbI3:Br:InI3).
  • Fabrication of all-inorganic PSCs using CsPbI3:Br:InI3 and a carbon electrode.
  • Characterization of material properties, device performance, and stability under ambient conditions.

Main Results:

  • The new CsPbI3:Br:InI3 perovskite retains the CsPbI3 bandgap but significantly reduces intrinsic defect concentration.
  • All-inorganic PSCs based on CsPbI3:Br:InI3 achieved a PCE of 12.04% and an open-circuit voltage of 1.20 V.
  • The CsPbI3:Br:InI3 PSCs demonstrated remarkable air stability, lasting over two months, a significant improvement over CsPbI3-based devices.

Conclusions:

  • Defect engineering via CsPbI3:Br:InI3 is a viable strategy to overcome the limitations of traditional CsPbI3 perovskites.
  • The developed all-inorganic PSCs offer a promising pathway towards cost-effective, stable, and high-performance solar energy conversion.
  • The ability to fabricate these devices in high humidity without gloveboxes further enhances their potential for scalable manufacturing.