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Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µm.
Optics Express
|November 6, 2019
Summary
Optimized AlGaAsSb cladding layers enable efficient interband cascade lasers (ICLs) emitting at 3.3 µm. These lasers demonstrate high performance, operating continuously up to 80°C with significant output power.
Area of Science:
- Semiconductor Lasers
- Optoelectronics
- Materials Science
Background:
- Interband cascade lasers (ICLs) are crucial for mid-infrared applications.
- AlGaAsSb alloys offer potential for ICL cladding layers.
- Understanding growth condition impacts is vital for device optimization.
Purpose of the Study:
- Investigate the effect of AlGaAsSb cladding layer growth conditions on ICL properties.
- Optimize ICL structure for mid-infrared emission.
- Evaluate laser performance metrics including efficiency and operating temperature.
Main Methods:
- Fabrication of AlGaAsSb cladding layers with varied growth conditions.
- Characterization of ICL structures using optical and electrical measurements.
- Performance testing of narrow ridge ICLs in continuous wave (CW) operation.
Main Results:
- Achieved 65% internal quantum efficiency per stage for a 3.3 µm emitting ICL.
- Identified internal losses of 15 cm⁻¹ in n-type AlGaAsSb alloys.
- Demonstrated CW operation up to 80°C with 1 mW/facet output power at 80°C.
Conclusions:
- Optimized AlGaAsSb cladding layers provide performance comparable to traditional superlattice claddings.
- Higher optical losses in AlGaAsSb alloys impact overall device efficiency.
- The developed ICLs exhibit robust high-temperature continuous wave operation.
