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Updated: Jun 5, 2026

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Onset of in-plane ferroelectricity in the vanadium dioxide (VO2) mott insulator for in-memory computing applications

Mircea Dragoman1, Florin Nastase1, Mircea Modreanu2

  • 1National Institute for Research and Development in Microtechnologies, IMT-Bucharest, Voluntari, Romania.

Nanotechnology
|June 3, 2026
PubMed

Keywords:
Mott materialsferroelectricityin-memory computing

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