Silicon Nanowire-Based Schottky Diodes for Enhanced Temperature Sensing and Extended Operable Range

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Silicon nanowires are promising for electronic devices.
• Schottky diodes are used in various sensing applications.
• Wide-domain temperature sensors are crucial for diverse environments.

Purpose of the Study:

• To analyze the microstructural and electrical properties of silicon nanowire-based Schottky diodes.
• To evaluate their potential as wide-domain temperature sensors.
• To compare the effects of different metal deposition techniques on device performance.

Main Methods:

• Fabrication of Schottky diodes using nanostructured 3D substrates.
• Utilized Radio Frequency sputtering and Electron-beam evaporation for metal deposition.
• Characterized microstructural properties using SEM, XRD, and diffuse reflectance.
• Performed electrical characterization over a wide temperature range (100-500K).

Main Results:

• Nanostructured substrates increased contact area and Schottky barrier height.
• Both deposition methods resulted in slightly inhomogeneous contacts.
• Radio Frequency sputtered samples showed higher sensitivity (1-1.4 mV/K).
• Electron-beam evaporated devices exhibited excellent linearity (R² > 99.5%).

Conclusions:

• Silicon nanowire Schottky diodes demonstrate a significantly larger operable temperature range (100-500K) compared to planar devices.
• The choice of metal deposition technique influences sensitivity and linearity.
• These diodes are suitable for precise temperature sensing across wide temperature domains.