Picosecond coherent electron motion in a silicon single-electron source

An advanced understanding of ultrafast coherent electron dynamics is necessary for the application of submicrometre devices under a non-equilibrium drive to quantum technology, including on-demand single-electron sources¹, electron quantum optics^2-4, qubit control^5-7, quantum sensing^8,9 and quantum metrology¹⁰. Although electron dynamics along an extended channel has been studied extensively^2-4,11, it is hard to capture the electron motion inside submicrometre devices. The frequency of the internal, coherent dynamics is typically higher than 100 GHz, beyond the state-of-the-art experimental bandwidth of less than 10 GHz (refs. ^6,12,13). Although the dynamics can be detected by means of a surface-acoustic-wave quantum dot¹⁴, this method does not allow for a time-resolved detection. Here we theoretically and experimentally demonstrate how we can observe the internal dynamics in a silicon single-electron source that comprises a dynamic quantum dot in an effective time-resolved fashion with picosecond resolution using a resonant level as a detector. The experimental observations and the simulations with realistic parameters show that a non-adiabatically excited electron wave packet¹⁵ spatially oscillates quantum coherently at ~250 GHz inside the source at 4.2 K. The developed technique may, in future, enable the detection of fast dynamics in cavities, the control of non-adiabatic excitations¹⁵ or a single-electron source that emits engineered wave packets¹⁶. With such achievements, high-fidelity initialization of flying qubits⁵, high-resolution and high-speed electromagnetic-field sensing⁸ and high-accuracy current sources¹⁷ may become possible.