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Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface
Young Mo Kim1, T Markurt2, Youjung Kim1
1Institute of Applied Physics, Dept. of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
Abstract:
In order to explain the experimental sheet carrier density n2D at the interface of BaSnO3/LaInO3, we consider a model that is based on the presence of interface polarization in LaInO3 which extends over 2 pseudocubic unit cells from the interface and eventually disappears in the next 2 unit cells. Considering such interface polarization in calculations based on 1D Poisson-Schrödinger equations, we consistently explain the dependence of the sheet carrier density of BaSnO3/LaInO3 heterinterfaces on the thickness of the LaInO3 layer and the La doping of the BaSnO3 layer. Our model is supported by a quantitative analysis of atomic position obtained from high resolution transmission electron microscopy which evidences suppression of the octahedral tilt and a vertical lattice expansion in LaInO3 over 2-3 pseudocubic unit cells at the coherently strained interface.
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