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The effect of carrier doping on magnetism and electronic behavior in double perovskite La2ZnIrO6
Yuxia Gao1, Malik Ashtar1, Longmeng Xu1
1School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Abstract:
Tuning of spin-orbit coupling and electron correlation effects in iridates by introducing electron or hole carriers can produce interesting physical phenomena. In this work, we experimentally investigate the electron/hole doping effect on magnetism and electrical transport in the canted antiferromagnetic (AFM) double perovskite La2ZnIrO6, where hole/electron doping are realized in two serial La2Zn1-x Li x IrO6 (0 ⩽ x ⩽ 0.35) and La2Zn1-y Ga y IrO6 (0 ⩽ y ⩽ 0.3) compounds, respectively. The x-ray photoelectron spectroscopy (XPS) reveals the existence of Ir5+ and Ir3+ oxide states in the Li+ and Ga3+ doped La2ZnIrO6. The magnetic susceptibilities and electron spin resonance (ESR) results reveal different responses between the Ir5+(5d4) and Ir3+ (5d6) ions in doped La2ZnIrO6, the Ir5+ ions have Van-Vleck paramagnetic contribution contrast to the completely nonmagnetic Ir3+ ions. Moreover, the Li+ doping cause more dramatic suppression of transition temperature (T N) and net ferromagnetic (FM) moments. All the Li+/Ga3+ doped samples remain Mott insulating state well fitted by the variable-range-hopping (VRH) transport mechanism. As a comparison, hole-doping is more effective to enhance the electrical conductivity than the case of electron, suggesting possible asymmetry of density of states nearby the Fermi level.
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