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Optimized oxygen deprived low temperature sputtered WO3 thin films for crystalline structures.

Sidra Farid1, Bo Hsu1, Liliana Stan2

  • 1Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States of America.

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|November 12, 2019
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Summary

Sputtered tungsten trioxide (WO3) thin films can be amorphous or crystalline based on processing. Annealing WO3 films at 300°C or higher induces crystallization and improves electrical properties for various applications.

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Area of Science:

  • Materials Science
  • Thin Film Technology
  • Nanotechnology

Background:

  • Tungsten trioxide (WO3) is a promising material for various electronic and optical applications.
  • Controlling the properties of WO3 thin films is crucial for optimizing device performance.
  • Sputtering is a common technique for depositing thin films, but process parameters significantly influence film characteristics.

Purpose of the Study:

  • To investigate the impact of sputtering parameters on the structural, vibrational, and electrical properties of WO3 thin films.
  • To understand the fundamental aspects of WO3 sputtering at low temperatures and low oxygen partial pressures.
  • To explore the potential of WO3 thin films for applications involving temperature and oxygen-sensitive substrates.

Main Methods:

  • Sputtering deposition of WO3 thin films at various substrate temperatures and oxygen partial pressures.
  • Structural characterization using Raman spectroscopy to analyze vibrational modes and phase identification.
  • Rapid thermal annealing (RTA) at temperatures of 300°C and above for 10 minutes.
  • Electrical property measurements to assess transport behavior (insulating vs. semiconducting).

Main Results:

  • As-deposited WO3 films were amorphous at room temperature or substrate temperatures up to 400°C with low oxygen partial pressure.
  • Annealing at 300°C or higher resulted in the crystallization of monoclinic WO3 phases, evidenced by distinct Raman peaks.
  • A transition from insulating to semiconducting behavior was observed in the films upon post-annealing.
  • Annealed films exhibited stoichiometric WO3 phases without detectable external defects.

Conclusions:

  • Processing parameters, particularly substrate temperature and oxygen partial pressure, critically influence the structural and electrical properties of sputtered WO3 films.
  • Rapid thermal annealing is an effective method to crystallize amorphous WO3 films, enhancing their semiconducting properties.
  • The study provides a pathway for utilizing WO3 thin films in applications such as electrochromic devices and electronic components requiring stability at higher temperatures and controlled gas environments.