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Updated: Jan 3, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Nano-opto-electro-mechanical switches operated at CMOS-level voltages
Christian Haffner1,2,3, Andreas Joerg4, Michael Doderer4
1Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland. christian.haffner@nist.gov.
Abstract:
Combining reprogrammable optical networks with complementary metal-oxide semiconductor (CMOS) electronics is expected to provide a platform for technological developments in on-chip integrated optoelectronics. We demonstrate how opto-electro-mechanical effects in micrometer-scale hybrid photonic-plasmonic structures enable light switching under CMOS voltages and low optical losses (0.1 decibel). Rapid (for example, tens of nanoseconds) switching is achieved by an electrostatic, nanometer-scale perturbation of a thin, and thus low-mass, gold membrane that forms an air-gap hybrid photonic-plasmonic waveguide. Confinement of the plasmonic portion of the light to the variable-height air gap yields a strong opto-electro-mechanical effect, while photonic confinement of the rest of the light minimizes optical losses. The demonstrated hybrid architecture provides a route to develop applications for CMOS-integrated, reprogrammable optical systems such as optical neural networks for deep learning.
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