Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Fermi Level Dynamics01:12

Fermi Level Dynamics

609
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
609
Energy Bands in Solids01:01

Energy Bands in Solids

1.8K
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
1.8K
Fermi Level01:18

Fermi Level

1.5K
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
1.5K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.8K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
1.8K
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

1.1K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.1K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

841
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
841

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Probing Moiré Excitons in MoSe<sub>2</sub>/WSe<sub>2</sub> Heterobilayers by Combined Micro-photoluminescence and Lateral Force Microscopy.

Nano letters·2026
Same author

Control theory analysis of dynamic metabolic response elucidates mitochondrial-cytoplasmic coupling and nutrient partitioning.

bioRxiv : the preprint server for biology·2026
Same author

Eight-qubit operation of a 300 mm SiMOS foundry-fabricated device.

Nature communications·2026
Same author

A pico-calorimeter for cellular metabolism and antimicrobial susceptibility testing.

Proceedings of the National Academy of Sciences of the United States of America·2026
Same author

Magnon hydrodynamics in an atomically thin ferromagnet.

Science (New York, N.Y.)·2026
Same author

Imaging the flat bands of magic-angle graphene reshaped by interactions.

Nature·2026

Related Experiment Video

Updated: Jan 3, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K

Electrical control of interlayer exciton dynamics in atomically thin heterostructures.

Luis A Jauregui1, Andrew Y Joe1, Kateryna Pistunova1

  • 1Department of Physics, Harvard University, Cambridge, MA, USA.

Science (New York, N.Y.)
|November 16, 2019
PubMed
Summary

Atomically thin transition metal dichalcogenide (TMD) heterostructures enable the creation of long-lived interlayer excitons. These excitons can be optically and electrically generated and controlled, paving the way for quantum manipulation.

More Related Videos

Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids
08:04

Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids

Published on: May 27, 2020

8.9K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.2K

Related Experiment Videos

Last Updated: Jan 3, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K
Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids
08:04

Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids

Published on: May 27, 2020

8.9K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.2K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Optics

Background:

  • Atomically thin transition metal dichalcogenides (TMDs) form van der Waals heterostructures.
  • These heterostructures facilitate the formation of interlayer excitons (IXs) from electrons and holes in distinct layers.
  • Interlayer excitons exhibit large binding energies and extended lifetimes.

Purpose of the Study:

  • To achieve optical and electrical generation of long-lived neutral and charged interlayer excitons in TMD heterostructures.
  • To investigate the propagation dynamics and control of these interlayer excitons.
  • To explore the potential for electrical control and quantum manipulation of excitons.

Main Methods:

  • Fabrication of van der Waals heterostructures using monolayer TMDs.
  • Optical excitation to generate interlayer excitons.
  • Electrical measurements using ohmic contacts to study exciton drift.
  • Application of gate electrodes to control exciton propagation.

Main Results:

  • Demonstrated optical and electrical generation of long-lived neutral and charged interlayer excitons.
  • Observed propagation of neutral interlayer excitons across the sample.
  • Showed that exciton propagation is controllable via excitation power and gate electrodes.
  • Facilitated drift motion of charged interlayer excitons using ohmic contacts.

Conclusions:

  • Electrical generation and control of interlayer excitons in TMD heterostructures is feasible.
  • This provides a pathway for the quantum manipulation of bosonic composite particles.
  • Complete electrical tunability of excitons is achievable.