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Updated: Jan 3, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction Induced by a Graphene Interlayer

Hoon Hahn Yoon, Wonho Song, Sungchul Jung

    ACS Applied Materials & Interfaces
    |November 23, 2019
    PubMed

    Keywords:
    Schottky barrierdiffusion barriergrapheneinteraction dipole layerinterface-trap densitynegative Fermi-level pinning

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