Transmission Electron Microscopy
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
A Addad1, P Carrez1, P Cordier1
1Université de Lille, CNRS, INRA, ENSCL, UMR 8207 - UMET - Unité Matériaux et Transformations Lille France.
Anhydrous phase B and stishovite directly form from olivine under high pressure and temperature. Their structures and properties were calculated using advanced microscopy and computational methods.
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