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Updated: Jan 3, 2026

11:14
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
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Anhydrous Phase B: Transmission Electron Microscope Characterization and Elastic Properties
Abstract:
Anhydrous phase B and stishovite formed directly from olivine in experiments at 14 GPa and 1400 °CThe structure of anhydrous phase B is determined ab initio from precession electron diffraction tomography in transmission electron microscopyElastic and seismic properties of anhydrous phase B are calculated.
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