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Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss

Hong-Kai Mao1, Ying Wang1, Xue Wu2

  • 1The Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China.

Micromachines
|November 30, 2019
PubMed

Keywords:
4H-SiCIGBTON-state voltagebreakdown voltage (BV)turn-off loss

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