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MOSFET Amplifiers01:17

MOSFET Amplifiers

432
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
432
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

1.0K
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
1.0K
MOS Capacitor01:25

MOS Capacitor

1.4K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.4K
MOSFET01:16

MOSFET

1.1K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.1K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

721
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
721
Passive Filters01:27

Passive Filters

919
Passive filters are utilized to shape the frequency spectrum of signals across a diverse array of applications. These filters, using only passive elements like resistors (R), inductors (L), and capacitors (C), are capable of selectively allowing or blocking certain frequency ranges without the need for external power sources.
Low-Pass Filters
Low-pass filters are designed to transmit signals with frequencies lower than the cutoff frequency, ωc, and attenuate those above it. The cutoff...
919

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Updated: Jan 3, 2026

X-ray Beam Induced Current Measurements for Multi-Modal X-ray Microscopy of Solar Cells
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A CMOS Low Pass Filter for SoC Lock-in-Based Measurement Devices.

Jorge Pérez-Bailón1, Belén Calvo1, Nicolás Medrano1

  • 1Group of Electronic Design, Aragon Institute for Engineering Research, I3A, University of Zaragoza, 50009 Zaragoza, Spain.

Sensors (Basel, Switzerland)
|November 30, 2019
PubMed
Summary

This study introduces a novel G-C low pass filter (LPF) for SoC lock-in amplifiers. The filter offers a wide tunable frequency range with low power and small area, ideal for portable measurement systems.

Keywords:
impedance spectroscopylock-in amplifierlow pass filterlow-voltage low-poweron-chip instrumentationsensor arrayvery low frequency

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Area of Science:

  • Electrical Engineering
  • Analog Integrated Circuit Design
  • Low Power Electronics

Background:

  • Lock-in amplifiers are crucial for precise signal extraction in noisy environments.
  • On-chip integration of filters demands high efficiency in terms of area and power consumption.
  • Existing solutions often struggle to meet the stringent requirements for portable, multichannel systems.

Purpose of the Study:

  • To present a fully integrated G-C low pass filter (LPF) for System-on-Chip (SoC) lock-in amplifier applications.
  • To demonstrate a current steering G reduction-tuning technique for wideband frequency tunability.
  • To validate the filter's performance in terms of power, area, and dynamic range for portable measurement systems.

Main Methods:

  • Integration of first-order and second-order single-ended LPF topologies.
  • Utilizing a 1.8 V to 0.18 µm CMOS process.
  • Experimental validation of tuneable cutoff frequency, current consumption, size, and dynamic range.

Main Results:

  • Achieved a tuneable cutoff frequency spanning five orders of magnitude (mHz to kHz).
  • Demonstrated constant current consumption below 3 µA/pole.
  • Exhibited compact size (<0.0140 mm²/pole) and a dynamic range exceeding 70 dB.
  • Showcased competitive performance compared to state-of-the-art solutions.

Conclusions:

  • The proposed G-C LPF meets the demanding requirements for on-chip portable measurement systems.
  • The filter's efficiency in area and power is highly relevant for multichannel instruments and sensor arrays.
  • This design offers a competitive solution for next-generation portable measurement instrumentation.