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Updated: Jan 3, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Quantum dot thermometry at ultra-low temperature in a dilution refrigerator with a 4He immersion cell
G Nicolí1, P Märki1, B A Bräm1
1Solid State Physics Laboratory, ETH Zürich, Otto-Stern-Weg 1, 8093 Zürich, Switzerland.
Abstract:
Experiments performed at a temperature of a few millikelvins require effective thermalization schemes, low-pass filtering of the measurement lines, and low-noise electronics. Here, we report on the modifications to a commercial dilution refrigerator with a base temperature of 3.5 mK that enable us to lower the electron temperature to 6.7 mK measured from the Coulomb peak width of a quantum dot gate-defined in an [Al]GaAs heteostructure. We present the design and implementation of a liquid 4He immersion cell tight against superleaks, implement an innovative wiring technology, and develop optimized transport measurement procedures.

