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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Facile Process for Surface Passivation Using (NH₄)₂S for the InP MOS Capacitor with ALD Al₂O₃.

Jung Sub Lee¹, Tae Young Ahn¹, Daewon Kim²

¹Department of Orthopaedic Surgery and Medical Research Institute, Pusan National University Hospital, 179 Gudeok-ro, Seo-gu, Busan 49241, Korea.

Materials (Basel, Switzerland)

|December 1, 2019

Summary

Ammonium sulfide ((NH4)2S) passivation optimizes Indium Phosphide (InP) metal-oxide-semiconductor capacitors. A 10% (NH4)2S treatment for 10 minutes best suppresses native oxide growth and improves electrical properties.

Keywords:

(NH4)2S III–V semiconductor indium phosphide (InP), Al2O3 sulfur passivation

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Area of Science:

Materials Science
Semiconductor Physics

Background:

Indium Phosphide (InP) is a crucial semiconductor material for electronic and optoelectronic devices.
Passivation of the InP surface is essential to mitigate defects and improve device performance.
Native oxide growth on InP can degrade its electrical characteristics.

Purpose of the Study:

To optimize the conditions for ammonium sulfide ((NH4)2S) passivation of InP (100) substrates.
To investigate the effect of (NH4)2S treatment on the electrical properties of InP metal-oxide-semiconductor (MOS) capacitors.
To evaluate the suppression of native oxide growth on passivated InP surfaces.

Main Methods:

Capacitance-voltage (C-V) measurements were performed on InP MOS capacitors.
The concentration and treatment time of ammonium sulfide ((NH4)2S) were varied.
X-ray photoelectron spectroscopy (XPS) was used to analyze surface composition.
Interface trap density (D_it) was extracted from C-V data.

Main Results:

A 10% ammonium sulfide ((NH4)2S) treatment for 10 minutes yielded the best electrical properties.
This optimal treatment minimized hysteresis and frequency dispersion in C-V characteristics.
XPS and D_it analysis confirmed the suppression of native oxide growth after passivation.

Conclusions:

Optimized ammonium sulfide ((NH4)2S) passivation effectively improves the electrical performance of InP MOS capacitors.
The 10% (NH4)2S treatment for 10 minutes is identified as the optimal condition.
This passivation method successfully suppresses native oxide formation, enhancing InP surface stability.