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Simple Interface Modification of Electroactive Polymer Film Electrodes.

Michel De Keersmaecker¹, John R Reynolds¹

¹School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.

ACS Applied Materials & Interfaces

|December 5, 2019

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Interface engineering with PEDOT:PSS enhances electrochromic devices (ECDs). This simple, roll-to-roll compatible design improves charge transport and performance for organic semiconductor applications.

Area of Science:

Materials Science
Organic Electronics
Interface Engineering

Background:

Optimizing organic semiconductor devices requires understanding interface properties.
Interface engineering is key to controlling morphology and molecular structure in multilayer devices.

Purpose of the Study:

To investigate how modifying the inorganic electrode/organic semiconductor interface with PEDOT:PSS affects electrochromic polymer films.
To develop a simplified, roll-to-roll compatible electrochromic device (ECD) design.

Main Methods:

Utilized PEDOT:PSS as an interfacial material between an inorganic electrode and a PProDOT-(CH2OEtHx)2 polymer film.
Fabricated and characterized battery-type electrochromic devices (ECDs).

Main Results:

Keywords:

PEDOT:PSS electroactive polymer interfaces electrochemical impedance spectroscopy electrochromic devices polymer film morphology change

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PEDOT:PSS modification lowered the charge transport barrier, improving device efficiency.
Achieved a simple, versatile, roll-to-roll compatible ECD design without oxidizing the charge storage film.
Demonstrated competitive performance with 50-55% optical contrast and 2-4 s switching times.

Conclusions:

Interface modification with PEDOT:PSS is a viable strategy for optimizing organic electrochromic devices.
The new ECD design offers improved processing reproducibility and performance.
This approach enables efficient and reliable organic semiconductor device fabrication.