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Electrically driven optical interferometry with spins in silicon carbide.

Kevin C Miao1, Alexandre Bourassa1, Christopher P Anderson1,2

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Researchers achieved electrically driven quantum interference in silicon carbide divacancies. This breakthrough enables coherent control of optical and spin properties for quantum communication and hybrid systems.

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Area of Science:

  • Quantum Information Science
  • Solid-State Physics
  • Materials Science

Background:

  • Interfacing solid-state defect electron spins with other quantum systems is challenging due to weak environmental coupling.
  • While ground-state spins offer coherence, their weak coupling limits control fields.
  • Excited-state orbitals present stronger coupling opportunities for manipulation.

Purpose of the Study:

  • To demonstrate electrically driven coherent quantum interference in single divacancies in 4H silicon carbide.
  • To explore the potential of divacancies for quantum communication and hybrid quantum systems.

Main Methods:

  • Utilizing single, basally oriented divacancies in 4H silicon carbide.
  • Applying microwave frequency electric fields to drive excited-state orbitals.
  • Observing resonant optical absorption spectra to identify quantum interference phenomena.

Main Results:

  • Successfully demonstrated electrically driven coherent quantum interference in the optical transition of divacancies.
  • Induced Landau-Zener-Stückelberg interference fringes in the optical absorption spectrum.
  • Observed coherent optical and spin subsystems due to the basal divacancy's symmetry.

Conclusions:

  • Basal divacancies in 4H silicon carbide exhibit properties suitable for quantum applications.
  • The ability to coherently control both optical and spin degrees of freedom is crucial for quantum communication and hybrid systems.
  • Divacancies are promising candidates for advanced quantum technologies.