Related Experiment Video
Updated: Jan 2, 2026
Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing
Xuan Liu1, Matthew M Sartin, Yunhua Liu
1State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Engineering Research Centre of Electrochemical Technologies of Ministry of Education, Department of Chemistry, College of Chemistry and Chemical Engineering, and Graphene Industry and Engineering Research Institute, Xiamen University, Xiamen 361005, China.
Abstract:
The interfacial electron transfer capability of Si/SiO2 wafer supported single layer graphene is optimized by thermal annealing in an inert gas environment, which facilitates its applications in both electrochemical and electronic devices.
