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Atomic, electronic and transport properties of In-Au 2D compound on Si(1 0 0)
D V Gruznev1, L V Bondarenko1, A Y Tupchaya1
1Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok, Russia.
Abstract:
Two-dimensional (In, Au)/Si(1 0 0)c(2 [Formula: see text] 2) compound was synthesized and its atomic arrangement, electron band structure and low-temperature transport properties were characterized using scanning tunneling microscopy, angle-resolved photoelectron spectroscopy and four-point-probe resistivity measurements assisted with first-principles density-functional-theory calculations. The present results are compared to those obtained earlier for the parent (Tl, Au)/Si(1 0 0)c(2 [Formula: see text] 2) system.
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