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Related Experiment Video

Updated: Jan 2, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Junctionless Poly-GeSn Ferroelectric Thin-Film Transistors with Improved Reliability by Interface Engineering for

Chuan-Pu Chou¹, Yan-Xiao Lin¹, Yu-Kai Huang¹

¹Department of Engineering and System Science , National Tsing Hua University , Hsinchu 30013 , Taiwan.

ACS Applied Materials & Interfaces

|December 10, 2019

Summary

Ferroelectric thin-film transistors using germanium-tin (GeSn) channels show improved performance and reliability. These devices enable neuromorphic computing with high pattern recognition accuracy and long-term plasticity.

Keywords:

HfZrOx NH3 plasma treatment interfacial layer neuromorphic computing plasticity poly-GeSn reliability thin-film transistors

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Last Updated: Jan 2, 2026

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Area of Science:

Materials Science
Electrical Engineering
Computer Science

Background:

Ferroelectric hafnium zirconate (Fe-HZO) is crucial for advanced electronics.
Improving the remnant polarization (Pr) and reliability of Fe-HZO devices is essential.
Germanium-tin (GeSn) offers unique properties for semiconductor applications.

Purpose of the Study:

To enhance ferroelectric thin-film transistors (Fe-TFTs) using poly-GeSn channels.
To improve the reliability and synaptic functions of Fe-TFTs for neuromorphic computing.
To demonstrate the feasibility of on-chip training using these devices.

Main Methods:

Utilized poly-GeSn as a channel material for Fe-HZO, leveraging lower thermal expansion for higher stress and improved Pr.
Implemented a two-stage interface engineering process: NH3 plasma treatment and Ta2O5 interfacial layer growth.
Fabricated junctionless Fe-TFTs and evaluated their performance in terms of reliability, retention, and synaptic plasticity.

Main Results:

Achieved larger remnant polarization (Pr) with poly-GeSn compared to poly-Ge.
Demonstrated negligible Pr degradation up to 10^6 cycles and high retention (96% Pr after 10 years at 85°C).
Exhibited long-term plasticity with 80 analog conductance states, suitable for neuromorphic applications, achieving 91.4% pattern recognition accuracy.

Conclusions:

Poly-GeSn Fe-TFTs with interface engineering offer superior reliability and performance.
The developed devices show significant potential for emulating brain-like synaptic plasticity.
These findings pave the way for implementing neuromorphic computing via monolithic 3D ICs.