Related Experiment Video
Updated: Jan 2, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
Exciton control in a room temperature bulk semiconductor with coherent strain pulses
Edoardo Baldini1, Adriel Dominguez2, Tania Palmieri1
1Laboratory of Ultrafast Spectroscopy, ISIC and Lausanne Centre for Ultrafast Science (LACUS), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Abstract:
Controlling the excitonic optical properties of room temperature semiconductors using time-dependent perturbations is key to future optoelectronic applications. The optical Stark effect in bulk and low-dimensional materials has recently shown exciton shifts below 20 meV. Here, we demonstrate dynamical tuning of the exciton properties by photoinduced coherent acoustic phonons in the cheap and abundant wide-gap semiconductor anatase titanium dioxide (TiO2) in single crystalline form. The giant coupling between the excitons and the photoinduced strain pulses yields a room temperature exciton shift of 30 to 50 meV and a marked modulation of its oscillator strength. An advanced ab initio treatment of the exciton-phonon interaction fully accounts for these results, and shows that the deformation potential coupling underlies the generation and detection of the giant acoustic phonon modulations.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Types of Semiconductors

