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Optically modulated magnetic resonance of erbium implanted silicon
Mark A Hughes1, Heqing Li2, Nafsika Theodoropoulou2
1Joule Physics Laboratory, School of Computing Science and Engineering, University of Salford, Salford, M5 4WT, UK. m.a.hughes@salford.ac.uk.
Scientific Reports
|December 15, 2019
Summary
Researchers used optically modulated magnetic resonance (OMMR) to characterize erbium (Er) centers in silicon. This study provides the first measurement of crystal field splitting for Er in silicon, crucial for quantum and photonic applications.
Area of Science:
- Quantum Information Science
- Materials Science
- Atomic, Molecular, and Optical Physics
Background:
- Erbium-implanted silicon is promising for quantum and photonic technologies.
- Understanding Er centers' properties (symmetry, energy levels, magnetic/optical behavior) is crucial but limited.
- Existing knowledge gaps hinder the development of Er-implanted Si applications.
Purpose of the Study:
- To investigate the properties of different Erbium (Er) centers in silicon using Optically Modulated Magnetic Resonance (OMMR).
- To measure the crystal field splitting of the 4I13/2 manifold of Er in silicon.
- To revise the understanding of the crystal field splitting for the 4I15/2 manifold.
Main Methods:
- Utilized Optically Modulated Magnetic Resonance (OMMR) to probe Er centers in silicon.
- Analyzed the EPR signal modulation by a tunable optical field.
- Cross-referenced OMMR spectral data with three independent experimental measurements.
Main Results:
- Successfully measured the crystal field splitting of the 4I13/2 manifold for Er in silicon for the first time.
- Revised the crystal field splitting values for the 4I15/2 manifold.
- Identified the origin of splitting from a pair of O-coordinated Er centers: one photoluminescence-active with C2v symmetry and one EPR-active with C1h symmetry.
Conclusions:
- The study provides the first direct measurement of crystal field splitting for Er in silicon, resolving key property ambiguities.
- The identified Er center pair (C2v and C1h symmetry) is a significant finding for understanding Er interactions in silicon.
- This Er center pair presents potential for developing controlled NOT (CNOT) quantum gates.
