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Probing Compositional Order in Atomic Columns: STEM Simulations Beyond the Virtual Crystal Approximation.
1Department of Chemical Engineering and NanoCenter, University of South Carolina, 715 Sumter St., Room 001, Columbia, SC29208, USA.
This study uses advanced simulations to analyze compositional disorder in Mo,V-oxide bronze. Findings reveal discrepancies with the virtual crystal approximation, highlighting the importance of atomic arrangements in HAADF-STEM imaging.
Area of Science:
- Materials Science
- Computational Materials Science
- Solid-State Chemistry
Background:
- Compositional disorder in complex oxides impacts material properties.
- The virtual crystal approximation (VCA) is a common but potentially inaccurate method for modeling disorder.
- Experimental techniques like HAADF-STEM are sensitive to atomic arrangements.
Purpose of the Study:
- To investigate compositional disorder in Mo,V-oxide bronze using advanced computational methods.
- To compare simulation results with experimental data and identify limitations of the VCA.
- To determine the influence of atomic ordering on high-angle annular dark-field (HAADF) imaging.
Main Methods:
- Multislice frozen-phonon calculations utilizing parallel computing.
- Modeling compositional disorder in metal-oxygen atomic columns.
- Analysis of high-angle annular dark-field (HAADF) imaging simulations and experimental data.
Main Results:
- The virtual crystal approximation underestimates V content in Mo,V-oxide bronze compared to simulations considering cation ordering.
- Discrepancies between VCA and simulations exceed the variability caused by different atomic configurations.
- HAADF-STEM imaging can distinguish between ordered and random atomic arrangements along columns.
- Simulated intensity variations qualitatively match experimental HAADF-STEM data for Mo,V-oxide bronze.
Conclusions:
- The VCA is insufficient for accurately modeling compositional disorder in this system.
- Atomic ordering significantly influences HAADF-STEM image intensities.
- A limited number of random configurations can effectively represent intensity variations, improving simulation accuracy.
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