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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

500
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
500
π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

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An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Crystal Field Theory - Octahedral Complexes02:58

Crystal Field Theory - Octahedral Complexes

30.2K
Crystal Field Theory
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
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Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells
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Electron-Doping Mottronics in Strongly Correlated Perovskite.

Jikun Chen1, Wei Mao2, Lei Gao1

  • 1Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.

Advanced Materials (Deerfield Beach, Fla.)
|December 20, 2019
PubMed
Summary

Hydrogen doping in perovskite nickelates creates highly insulating states and enables electronic conductance. This discovery paves the way for novel field-controlled electronic devices like Mottronics and iontronics.

Keywords:
electron correlationelectronic phase transitionshydrogen dopingperovskite oxidesrare-earth nickelates

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Solid-state chemistry

Background:

  • Electron localization and insulating states in perovskites are key for novel electronic devices.
  • Understanding doping effects on transport properties in defective materials is crucial.
  • Correlated nickelates offer a platform for exploring complex electronic phases.

Purpose of the Study:

  • Investigate hydrogen doping effects on transport properties in defective correlated nickelates.
  • Explore interface engineering and grain boundary designs for novel heterostructures.
  • Develop a Mottronics device utilizing hydrogen-induced electronic changes.

Main Methods:

  • Fabrication of HxSmNiO3/SrRuO3 heterostructures.
  • Interface engineering and grain boundary design.
  • Positron annihilation spectroscopy for chemical bonding analysis.

Main Results:

  • Discovery of unexpected high-concentration hydrogen doping in defective nickelate regions.
  • Tuning of Fermi-level and Mott-Hubbard band states leading to electronic conductance.
  • Successful fabrication of a Mottronics device with controlled interfacial hydrogen aggregation.

Conclusions:

  • Hydrogen doping in perovskite heterostructures offers a new materials physics paradigm.
  • Novel doping strategies via hydrogen-controlled orbital occupancy can advance Mottronic and iontronic devices.
  • Understanding hydrogen's role in defective regions is key for future electronic applications.