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Electron-Doping Mottronics in Strongly Correlated Perovskite.
Jikun Chen1, Wei Mao2, Lei Gao1
1Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
Advanced Materials (Deerfield Beach, Fla.)
|December 20, 2019
Summary
Hydrogen doping in perovskite nickelates creates highly insulating states and enables electronic conductance. This discovery paves the way for novel field-controlled electronic devices like Mottronics and iontronics.
Area of Science:
- Condensed matter physics
- Materials science
- Solid-state chemistry
Background:
- Electron localization and insulating states in perovskites are key for novel electronic devices.
- Understanding doping effects on transport properties in defective materials is crucial.
- Correlated nickelates offer a platform for exploring complex electronic phases.
Purpose of the Study:
- Investigate hydrogen doping effects on transport properties in defective correlated nickelates.
- Explore interface engineering and grain boundary designs for novel heterostructures.
- Develop a Mottronics device utilizing hydrogen-induced electronic changes.
Main Methods:
- Fabrication of HxSmNiO3/SrRuO3 heterostructures.
- Interface engineering and grain boundary design.
- Positron annihilation spectroscopy for chemical bonding analysis.
Main Results:
- Discovery of unexpected high-concentration hydrogen doping in defective nickelate regions.
- Tuning of Fermi-level and Mott-Hubbard band states leading to electronic conductance.
- Successful fabrication of a Mottronics device with controlled interfacial hydrogen aggregation.
Conclusions:
- Hydrogen doping in perovskite heterostructures offers a new materials physics paradigm.
- Novel doping strategies via hydrogen-controlled orbital occupancy can advance Mottronic and iontronic devices.
- Understanding hydrogen's role in defective regions is key for future electronic applications.
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