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Enhanced Thermoelectric Performance in n-Type SrTiO3/SiGe Composite
Jun Wang1, Jian-Bo Li1, Hao-Yang Yu1
1School of Materials Science and Engineering , Inner Mongolia University of Technology , No. 49 Aimin street, Xincheng district , Hohhot , Inner Mongolia Autonomous Region 010051 , China.
ACS Applied Materials & Interfaces
|December 21, 2019
Summary
High-performance oxide/silicon germanium (SiGe) composites achieve a figure-of-merit (ZT) of 0.91 at 1000 K. This advancement enhances thermoelectric power generation for practical applications.
Area of Science:
- Materials Science
- Solid State Physics
- Energy Conversion
Background:
- Silicon germanium (SiGe) alloys are promising for high-temperature thermoelectric power generation, particularly in deep-space missions.
- Enhancing the dimensionless thermoelectric figure-of-merit (ZT) is crucial for broader civil applications of SiGe.
Purpose of the Study:
- To develop high-performance oxide/SiGe bulk composites for improved thermoelectric applications.
- To investigate the effect of incorporating La-Nb-doped SrTiO3 (La-Nb-STO) nanoparticles into a SiGe matrix on thermoelectric properties.
Main Methods:
- Fabrication of phosphorus (P)-doped SiGe via mechanical alloying (ball-milling).
- Preparation of La-Nb-STO powder through ball milling of hot-pressed, hydrothermally synthesized material.
- Hot-press sintering of mixed P-doped SiGe and La-Nb-STO powders to create bulk composites.
Main Results:
- A high ZT of 0.91 was achieved in n-type oxide/SiGe bulk composites at 1000 K.
- The addition of La-Nb-STO nanoparticles increased the power factor by optimizing electron concentration and mobility.
- The second phase (La-Nb-STO) reduced thermal conductivity due to enhanced phonon scattering at interfaces.
Conclusions:
- The developed oxide/SiGe composites demonstrate significantly improved thermoelectric performance compared to typical space mission materials and single-phase SiGe.
- The strategy of incorporating oxide nanoparticles offers a viable route for further enhancing the ZT of nanostructured SiGe and SrTiO3-based materials.
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