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Single photon emission from top-down etched III-nitride quantum dots.
Yaonan Hou1,2,3, Yong Wang2, Qingkang Ai4
1School of Microelectronics, Shandong University, No. 1500 Shunhua Road, Lixia District, Jinan, Shandong Province, 250101, People's Republic of China.
Nanotechnology
|December 21, 2019
Summary
Researchers fabricated sub-10 nm III-nitride quantum dots (QDs) using electrochemical etching. These QDs exhibit high-purity single photon emission up to 130 K, demonstrating a viable top-down fabrication method.
Area of Science:
- Materials Science
- Quantum Optics
- Nanotechnology
Background:
- III-nitride quantum dots (QDs) are promising for quantum information technologies.
- Top-down fabrication methods offer alternative routes to QD synthesis.
Purpose of the Study:
- To investigate the single photon emission properties of III-nitride QDs fabricated by electrochemical etching.
- To assess the viability of top-down fabrication for producing high-quality QDs.
Main Methods:
- Fabrication of sub-10 nm III-nitride QDs embedded in GaN nanoneedles via electrochemical etching.
- Photoluminescence spectroscopy to analyze quantum confinement effects.
- Second-order correlation measurements to assess single photon purity.
Main Results:
- Achieved QDs with diameters below 10 nm exhibiting a 3.35 nm photoluminescence blueshift due to quantum confinement.
- Observed high-purity single photon emission with a second-order correlation value as low as 0.123.
- Demonstrated single photon emission up to 130 K with a high polarization degree of 0.69.
Conclusions:
- Electrochemical etching provides a viable top-down approach for fabricating III-nitride QDs with excellent single photon emission properties.
- The performance of these top-down fabricated QDs is comparable to those produced by epitaxial growth methods.
- This work opens avenues for scalable production of quantum emitters.
