Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory

Area of Science:

• Materials Science
• Electrical Engineering
• Computer Engineering

Background:

• Non-volatile spin-orbit torque magnetic random access memory (SOT-MRAM) offers advantages like non-volatility, high density, and scalability for future computers.
• Current SOT-MRAM technologies face challenges in operational speed and energy efficiency.

Purpose of the Study:

• To propose and evaluate a novel graphene-based recording device model for SOT-MRAM unit cells.
• To demonstrate the potential for enhanced performance in SOT-MRAM through this new design.

Main Methods:

• Development of a SOT-MRAM unit cell model incorporating a quasi-freestanding graphene layer intercalated with Au.
• Integration of an ultra-thin Pt layer between the graphene and magnetic tunnel junction.
• Experimental validation and theoretical estimations to confirm the device's efficiency.

Main Results:

• The proposed graphene recording element significantly reduces the electric current required for data recording.
• Experimental results and theoretical estimations confirm the enhanced efficiency of the graphene recording element.
• The model predicts faster operation and lower energy consumption for SOT-MRAM.

Conclusions:

• The graphene recording device is a promising innovation for improving SOT-MRAM performance.
• This technology offers a pathway to more efficient and faster non-volatile memory solutions.
• Further research and development can leverage this graphene-based approach for advanced computing applications.