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Updated: Dec 31, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide
Zheng-Dong Luo1, Xue Xia1, Ming-Min Yang1
1Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom.
Abstract:
Neuromorphic visual sensory and memory systems, which can perceive, process, and memorize optical information, represent core technology for artificial intelligence and robotics with autonomous navigation. An optoelectronic synapse with an elegant integration of biometric optical sensing and synaptic learning functions can be a fundamental element for the hardware-implementation of such systems. Here, we report a class of ferroelectric field-effect memristive transistors made of a two-dimensional WS2 semiconductor atop a ferroelectric PbZr0.2Ti0.8O3 (PZT) thin film for optoelectronic synaptic devices. The WS2 channel exhibits voltage- and light-controllable memristive switching, dependent on the optically and electrically tunable ferroelectric domain patterns in the underlying PZT layer. These devices consequently show the emulation of optically driven synaptic functionalities including both short- and long-term plasticity as well as the implementation of brainlike learning rules. Integration of these rich synaptic functionalities into one single artificial optoelectronic device could allow the development of future neuromorphic electronics capable of optical information sensing and learning.
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