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Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga2O3 MESFETs with Graphene-Gate Architectures and

Janghyuk Kim1, Jihyun Kim1

  • 1Department of Chemical and Biological Engineering , Korea University , Seoul 02841 , South Korea.

ACS Applied Materials & Interfaces
|January 4, 2020
PubMed

Keywords:
depletion-mode FETenhancement-mode FETgallium oxidetwo-dimensional materialultrawide band gap

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