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Sigmatropic rearrangements are a class of pericyclic reactions in which a σ bond migrates from one part of a π system to another. These are intramolecular rearrangements where the total number of σ and π bonds remain unchanged.
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Reversible displacive transformation in MnTe polymorphic semiconductor.

Shunsuke Mori1, Shogo Hatayama1, Yi Shuang1

  • 1Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Aoba-ku, Sendai, 980-8579, Japan.

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|January 5, 2020
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Summary
This summary is machine-generated.

Manganese telluride (MnTe) films undergo a reversible displacive transformation, enabling fast, low-energy electronic memory devices. This atomic-plane shuffling offers significant electrical and optical contrasts for advanced applications.

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Displacive transformation, a diffusionless atomic rearrangement, is key to developing advanced semiconducting devices.
  • Manganese telluride (MnTe) is a polymorphic compound with potential for novel material properties.
  • Understanding phase transitions in materials is crucial for next-generation electronics and photonics.

Purpose of the Study:

  • To investigate the displacive transformation in MnTe semiconductor films.
  • To explore the potential of MnTe for fast, nonvolatile memory applications.
  • To assess the optical switching capabilities of MnTe films.

Main Methods:

  • Fabrication of MnTe polycrystalline films.
  • Characterization of the reversible displacive transformation mechanism.
  • Evaluation of resistive switching properties using Joule heating.
  • Assessment of optical reflectance changes induced by laser heating.

Main Results:

  • MnTe films exhibit a reversible displacive transformation via atomic-plane shuffling.
  • Demonstrated nonvolatile resistive switching with lower energy and faster operation than conventional phase-change materials.
  • Achieved reversible changes in optical reflectance using laser heating.
  • Observed large electrical and optical contrasts due to the transformation.

Conclusions:

  • MnTe films are promising for developing fast-operation electronic and photonic phase-change devices.
  • The displacive transformation mechanism in MnTe offers a pathway to low power consumption devices.
  • This research provides new insights into utilizing diffusionless transitions for advanced memory and optical applications.