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Phase control in polymorphic transformation-based nonvolatile memory devices for reliable data reading in X-point

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This study explores the metastable wurtzite-type β' phase in manganese telluride (MnTe) for phase-change memory. Controlling its resistivity and volume fraction tunes memory performance, crucial for advanced 3D X-point architectures.

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Manganese telluride (MnTe) exhibits reversible phase transformations for phase-change memory.
  • The highly resistive wurtzite-type β′ phase in MnTe is underexplored for memory applications.

Purpose of the Study:

  • Investigate the impact of β′ phase resistivity (ρβ′) and volume fraction (fβ′) on MnTe memory performance.
  • Evaluate the threshold characteristics of MnTe memory cells based on the β′ to α phase transformation.

Main Methods:

  • Fabricated memory cells with varying resistive contrast (ΔR) based on a percolation model.
  • Analyzed current-voltage (I-V) curves to determine threshold voltage (Vth).

Main Results:

  • A percolation model suggests ρβ′ ≈ 500 Ω cm.
  • Threshold voltage (Vth) increases with increasing ΔR.
  • Threshold parameters are systematically modulated by controlling fβ′ and MnTe layer thickness.

Conclusions:

  • The tunability of threshold parameters is vital for MnTe-based phase-change memory.
  • Findings offer insights for designing polymorphic transformation memory compatible with 3D X-point architectures.