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Related Concept Videos

Properties of Transition Metals02:58

Properties of Transition Metals

25.9K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
25.9K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

352
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
352
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

259
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
259
Chemical Shift: Internal References and Solvent Effects01:17

Chemical Shift: Internal References and Solvent Effects

644
In an NMR sample, precise measurement of the absolute absorption frequencies of nuclei is difficult. A standard internal reference compound is added, and the frequency difference between the reference signal and sample signals is measured.
The internal reference compound generally used in NMR spectroscopy is tetramethylsilane (TMS). TMS is preferred because it is chemically inert, soluble in NMR solvents, and easily removable. Also, the highly shielded methyl protons in TMS yield an intense...
644
π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

1.1K
An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
1.1K
SN2 Reaction: Transition State02:26

SN2 Reaction: Transition State

9.8K
An SN2 reaction of an alkyl halide is a single-step process in which bond formation between the nucleophile and the substrate and bond breaking between the substrate and the halide occurs simultaneously through a transition state without forming an intermediate.
When the nucleophile approaches the electrophilic carbon with its lone pairs, the halide acts as a leaving group and moves away with the electron-pair bonded to the carbon. Dotted partial bonds represent the bonds being formed or broken...
9.8K

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Updated: Jul 5, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Nonvolatile Isomorphic Valence Transition in SmTe Films.

Shogo Hatayama1,2, Shunsuke Mori1, Yuta Saito2

  • 1Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11, Aoba-yama, Aoba-ku, Sendai 980-8579, Japan.

ACS Nano
|January 16, 2024
PubMed
Summary
This summary is machine-generated.

Samarium telluride (SmTe) films exhibit significant electrical and optical property changes without structural shifts, driven by a valence transition. This discovery offers a new path for developing advanced optoelectronic semiconductor materials.

Keywords:
SmTeelectronic structure changelanthanide monochalcogenidenonvolatile isomorphic valence transitionopto-electrical applicationvalence state mixing

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Optoelectronic devices require materials with tunable electrical and optical properties.
  • Samarium telluride (SmTe) is a material with potential for such applications.

Purpose of the Study:

  • To investigate the mechanism behind the significant changes in resistivity and band gap in SmTe films.
  • To explore the potential of SmTe as a semiconductor material for optoelectrical applications.

Main Methods:

  • Fabrication and annealing of SmTe films with a NaCl-type structure.
  • Characterization of electrical resistivity and optical band gap.
  • Analysis of electronic structure changes attributed to valence transitions.

Main Results:

  • As-deposited and annealed SmTe films showed resistivity contrast over 10^5 and a band gap of ~1.45 eV without structural transitions.
  • Valence transition (VT) between Sm^2+ and Sm^3+ was identified as the cause of property changes, linked to stress.
  • Nonvolatile low-resistive states were achieved by mixing Sm valence states.

Conclusions:

  • SmTe exhibits tunable properties via stress-induced valence transitions, offering a novel mechanism for optoelectronic applications.
  • Annealing and electrical pulsing can regulate Sm valence states, enabling device operation.
  • This study presents a promising approach for developing new semiconductor materials for optoelectronics.